Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

A comparison of impurity-free and ion-implantation-induced intermixing of InGaAsÕInP quantum wells

We have compared the time integrated photoluminescence ~PL! and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are ...

GaInN Quantum Wells as Optoelectronic Transducers for Biosensing of Ferritins

In this work, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in biosensing are presented. In contrast to the conventional electrical read-out of III-nitride-based sensors, a purely optical photoluminescence read-out is performed. Particularly, optical investigations of the iron-storage molecule ferritin deposited on GaInN quantum wells are p...

Deep photoluminescence in S&i 1 -,Ge,/Si quantum wells created by ion implantation and annealing

Strong broad photoluminescence similar to that observed in some materials grown by molecular beam epitaxy (MBE) has been observed in Si/Si, -,Ge,/Si quantum wells grown by chemical vapor deposition. As grown, the samples exhibited SiGe band-edge phonon-resolved bound-exciton luminescence, but after being self-implanted with silicon and annealed at 600 “C, a deep broad luminescence band 80-100 m...

Interface-induced magnetism in perovskite quantum wells